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2N60 2A, 600VN-CHANNEL POWER MOSFET

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2N60 2A, 600VN-CHANNEL POWER MOSFET

Brand Name : Hua Xuan Yang

Model Number : 2N60

Certification : RoHS、SGS

Place of Origin : ShenZhen China

MOQ : 1000-2000 PCS

Price : Negotiated

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Product name : Mosfet Power Transistor

APPLICATION : Power Management

FEATURE : Excellent RDS(on)

Power mosfet transistor : Enhancement Mode Power MOSFET

VDS : -100v

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2N60-TC3 Power MOSFET

2A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

2N60 2A, 600VN-CHANNEL POWER MOSFET

FEATURES

RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A

High Switching Speed

2N60 2A, 600VN-CHANNEL POWER MOSFET

ORDERING INFORMATION

Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
2N60L-TF1-T 2N60G-TF1-T TO-220F1 G D S Tube
2N60L-TF3-T 2N60G-TF3-T TO-220F G D S Tube
2N60L-TM3-T 2N60G-TM3-T TO-251 G D S Tube

2N60 2A, 600VN-CHANNEL POWER MOSFET


Note: Pin Assignment: G: Gate D: Drain S: Source

QW-R205-461.A

2N60 2A, 600VN-CHANNEL POWER MOSFET

n ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ± 30 V
Drain Current Continuous ID 2 A
Pulsed (Note 2) IDM 4 A
Avalanche Energy Single Pulsed (Note 3) EAS 84 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
Power Dissipation TO-220F/TO-220F1 PD 23 W
TO-251 44 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

n THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient TO-220F/TO-220F1 θJA 62.5 °C/W
TO-251 100 °C/W
Junction to Case TO-220F/TO-220F1 θJC 5.5 °C/W
TO-251 2.87 °C/W

n ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250μA 600 V
Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 1 µA
Gate-Source Leakage Current Forward IGSS VGS=30V, VDS=0V 100 nA
Reverse VGS=-30V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.0A 7.0 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS

VGS=0V, VDS=25V, f=1.0 MHz

 190 pF
Output Capacitance COSS 28 pF
Reverse Transfer Capacitance CRSS 2 pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1) QG VDS=200V, VGS=10V, ID=2.0A IG=1mA (Note 1, 2) 7 nC
Gateource Charge QGS 2.9 nC
Gate-Drain Charge QGD 1.9 nC
Turn-on Delay Time (Note 1) tD(ON)

VDS=300V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2)

 4 ns
Rise Time tR 16 ns
Turn-off Delay Time tD(OFF) 16 ns
Fall-Time tF 19 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current IS 2 A
Maximum Body-Diode Pulsed Current ISM 8 A
Drain-Source Diode Forward Voltage (Note 1) VSD VGS=0V, IS=2.0A 1.4 V
Reverse Recovery Time (Note 1) trr

VGS=0V, IS=2.0A,

dIF/dt=100A/µs (Note1)

 232 ns
Reverse Recovery Charge Qrr 1.1 µC

Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

  • Essentially independent of operating temperature.

2N60 2A, 600VN-CHANNEL POWER MOSFET

2N60 2A, 600VN-CHANNEL POWER MOSFET

2N60 2A, 600VN-CHANNEL POWER MOSFET


Product Tags:

n channel mosfet transistor

      

high voltage transistor

      
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