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HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

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HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : HXY4616

Product name : Mosfet Power Transistor

Type : mosfet transistor

Product ID : 20G04S

VDS : 40V

Features : Surface mount package

VGS : ±20v

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HXY4616 30V Complementary MOSFET

Description

The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low Input Voltage inverter applications.

HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

N-Channel Electrical Characteristics (T=25°C unless otherwise noted)
HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

A. The value of RθJA is measured with the device mounted on 1in A =25°C. The value in any given application depends on the user's specific board design.2 FR-4 board with 2oz. Copper, in a still air environment with T

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
HXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFETHXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFETHXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFETHXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFETHXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFETHXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFETHXY4616 Logic Level Transistor , High Voltage Transistor 30V Complementary MOSFET

Product Tags:

high current mosfet switch

      

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