Sign In | Join Free | My tjskl.org.cn
China Shenzhen Hua Xuan Yang Electronics Co.,Ltd logo
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
Active Member

6 Years

Home > Silicon Power Transistor >

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Contact Now

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : A92

Collector-Base Voltage : -310V

Type : Triode Transistor

Case : Tape/Tray/Reel

Material : Silicon

Collector Current : -200 mA

Collector Power Dissipation : 500mW

Contact Now

SOT-89-3L Plastic-Encapsulate Transistors A92 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :A92

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -310 V
VCEO Collector-Emitter Voltage -305 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current- Continuous -200 mA
ICM Collector Current -Pulsed -500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-100µA,IE=0 -310 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -305 V
Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V

Collector cut-off current

ICBO VCB=-200V,IE=0 -0.25 µA

ICEO

VCE=-200V,IB=0 -0.25 µA
VCE=-300V,IB=0 -5 µA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA

DC current gain

hFE(1) VCE=-10V, IC=-1mA 60
hFE(2) VCE=-10V, IC=-10mA 100 300
hFE(3) VCE=-10V, IC=-80mA 60
Collector-emitter saturation voltage VCE(sat) IC=-20mA,IB=-2mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC=-20mA,IB=-2mA -0.9 V
Transition frequency fT VCE=-20V,IC=-10mA,f=30MHz 50 MHz



Typical Characteristics

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

A92 High Current NPN Transistor , High Power NPN Silicon Transistor



Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



SOT-89-3L Suggested Pad Layout

A92 High Current NPN Transistor , High Power NPN Silicon Transistor

SOT-89-3L Tape and Reel
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
A92 High Current NPN Transistor , High Power NPN Silicon Transistor
A92 High Current NPN Transistor , High Power NPN Silicon Transistor



Product Tags:

high frequency transistor

      

power switch transistor

      
Quality A92 High Current NPN Transistor , High Power NPN Silicon Transistor for sale

A92 High Current NPN Transistor , High Power NPN Silicon Transistor Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:
*Message:
Characters Remaining: (0/3000)